Effect of substrate temperature and deposition rate on the photoconductivity of sputtered a-Si : H
نویسندگان
چکیده
2014 The variation of the photoconductivity versus photon energy is reported for samples deposited at 150 °C, 190 °C and 250 °C at low (30 Å/min.) and high (~ 150 Å/min.) deposition rates. The spin densities of the same samples are also reported. Taking into account the hydrogen concentration and distribution in these samples, a model according to the photoconductivity is mainly limited by the density and depth of shallow traps originating from hydrogen independent matrix defects is proposed. J. Physique LETTRES 41 (1980) L-483 L-486
منابع مشابه
Electrochemical Deposition of Flower-Like Nickel Nanostructures on Well-Defined n-Si (111):H
In this paper the electrodeposition of nickel on n-Si(111):H substrate, in the presence of sulphuric acid, was studied. Cyclic voltammetry has been used to characterize the electrochemical behavior of the system. The nickel deposits had a flower-like morphology with the sphericalnanostructure nucleus, distributed uniformly on the surfaces of the prepared n-Si(111) substrate.
متن کاملEffect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate
ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...
متن کاملSimulation of Fabrication toward High Quality Thin Films for Robotic Applications by Ionized Cluster Beam Deposition
The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...
متن کاملResidual Stress in Cu Sputtered Films on Glass Substrates at Different Substrate Temperatures
Copper films of 300 nm thickness deposited by planar magnetron sputtering on glass substrates, for substrate temperatures between 300 and 500 K, and deposition rate of 10 ?s?1. Microstructure of these films was obtained by X-ray diffraction, while the texture mode of diffractometer was used for stress measurement by the sin2? technique. The components of the stress tensor are obtained using mea...
متن کاملImproved Thermal Stability of NiSi Nanolayer in Ni-Si Co-sputtered Structure
Electrical, structural and morphological properties of Ni silicide films formed in Ni(Pt 4at.% )/Si(100) and Ni0.6Si0.4(Pt4at.% )/Si(100) structures at various annealing temperatures ranging from 200 to 1000 oC were studied. The Ni(Pt) and Ni0.6Si0.4(Pt) films with thickness of 15 and 25 nm were deposited by RF magnetron co-sputtering method, respectively. The annealing process of the structur...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016